BACK-CHANNEL-ETCH TYPE THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

摘要

A back-channel-etch type TFT includes a gate electrode, an SiN film that is formed on the gate electrode, and an SiO film that is formed and patterned on the SiN film. The TFT further includes an polycrystalline semiconductor film that is formed and patterned on the SiO film in contact with the SiO film in such a way that all pattern ends of the polycrystalline semiconductor film are located in close proximity to pattern ends of the SiO film.