PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM TREATMENT DEVICE, AND METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY ELEMENT

摘要

A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via the perovskite-type layer, and thereby phase-changed into a crystal state or an amorphous state.