发明名称 |
PREPARATION METHOD OF AL-INDUCED NANOCRYSTALLINE SILICON INDUCED ALUMINIUM AND THE NANOCRYSTALLINE SILICON THIN FILM PREPARED USING THE SAME |
摘要 |
PURPOSE: A preparation method of al-induced nano-crystalline silicon induced is provided to easily control optical property, chemical property, and a physical property by manufacturing nano-crystalline silicon thin film under nitrogen atmosphere. CONSTITUTION: A thin film is deposited on a silicon wafer by using a silicon target and an aluminum chip as a target material. The deposited thin film on wafer is anneal-processed to form a nano-crystal. The Si nano crystals is 1~20 nm. The aluminum chip is 2.5~10 weight% of the silicon target. A thermal process operates in the range of 400~1200 °C.
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申请公布号 |
KR20100081454(A) |
申请公布日期 |
2010.07.15 |
申请号 |
KR20090000694 |
申请日期 |
2009.01.06 |
申请人 |
INHA-INDUSTRY PARTNERSHIP INSTITUTE |
发明人 |
CHO, NAM HEE;SHIM, JAE HYUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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