| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reliably cut off a channel of a memory cell at the write-in operation. <P>SOLUTION: This NAND type nonvolatile semiconductor memory includes: a plurality of series-connected memory cells MCk1, MCk2 each includes a charge storage layer and a control gate electrode; a first select gate transistor connected between one end of the plurality of memory cells and a source line; a second select gate transistor connected between the other end of the plurality of memory cells and a bit line; and a driver for controlling voltages to be supplied to the control gate electrodes of the plurality of memory cells, respectively. At the write-in operation, the driver applies a first voltage to the control gate electrode of a first memory cell selected from the plurality of memory cells and applies a cut-off voltage that cuts off a channel of memory cell to respective control gate electrode of three or more second memory cells arranged side by side on the source line side from the first memory cell. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
