| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metallic contamination of a semiconductor wafer, and to prevent an internal and an external damage of the semiconductor wafer. SOLUTION: A vapor-phase growth device 100 includes a cooling chamber 10 for cooling a semiconductor wafer 1 by approximating the heated semiconductor wafer 1 to a metallic disk-shaped cooling plate 11. The cooling chamber 10 is provided to the cooling plate 11 and includes a plurality of supporting members 13 for supporting the peripheral border of the semiconductor wafer 1 in a circumferential direction at intervals. The supporting member 13 includes: a supporting surface 131 with a circular arc shape tip to which the semiconductor wafer 1 mounted directed to a center of the cooling plate 11; and a step difference 132 protruding from a supporting surface 131 and partially surrounding the outer circumference of the semiconductor wafer 1. The circular arc shape tip is provided at the predetermined height, wherein the semiconductor wafer 1 does not contact with the cooling plate 11 and inclined downward to the center of the cooling plate 11. COPYRIGHT: (C)2010,JPO&INPIT |
