发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE |
摘要 |
A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.
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申请公布号 |
US2010176372(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
US20100685361 |
申请日期 |
2010.01.11 |
申请人 |
SAMSUNG ELECTRONICS-MECHANICS CO., LTD. |
发明人 |
YOO SANG-DUK;JUNG HO-IL;LEE CHUL-KYU;JANG SUNG-HWAN;LEE WON-SHIN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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地址 |
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