THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

A thin film transistor which comprises an oxide semiconductor film containing indium oxide and at least one oxide selected from a group consisting of lanthanum oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide and ytterbium oxide, wherein the atomic ratio M/(In + M) is 0.1 to 0.4 inclusive when the at least one oxide is represented by M2O3.