发明名称 |
METHOD AND APPARATUS FOR SILICON REFINEMENT |
摘要 |
A method and respect material for the production of chlorosilanes (primarily: trichlorosilane) and the deposition of high purity poly-silicon from these chlorosilanes. The source for the chlorosilane production consists of eutectic or hypo-eutectic copper-silicon, the concentration range of said copper-silicon is between 10 and 16 wt% silicon. The eutectic or hypo-eutectic copper-silicon is cast in a shape suitable for a chlorination reactor, where it is exposed to a process gas, which consists, at least partially, of HCI. The gas reacts at the surface of the eutectic or hypo-eutectic copper-silicon and extracts silicon in the form of volatile chlorosilane. The depleted eutectic or hypo-eutectic material might be afterwards recycled in such a way that the amount of extracted silicon is replenished and the material is re-cast into the material shape desired.
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申请公布号 |
CA2746752(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
CA20092746752 |
申请日期 |
2009.12.23 |
申请人 |
ARISE TECHNOLOGIES CORPORATION |
发明人 |
BALKOS, ATHANASIOS TOM;DAWKINS, JEFFREY;DODD, PETER |
分类号 |
C01B33/039;C01B33/037 |
主分类号 |
C01B33/039 |
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