THROUGH SILICON VIA WITH SCALLOPED SIDEWALL

摘要

PROBLEM TO BE SOLVED: To provide a through silicon via with a scalloped sidewall. SOLUTION: A semiconductor device includes a substrate, one or more dielectric layers, and a through silicon via (TSV) that extends through the substrate and has a sidewall with a scalloped surface, wherein the depth of the scallop along the sidewall is greater than 0.01μm. COPYRIGHT: (C)2010,JPO&INPIT