SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device comprising at least an n-type MIS transistor (NTr).  The n-type MIS transistor (NTr) comprises: a first gate insulating film (13a) which is formed on a first semiconductor region (10a) in a semiconductor substrate (10); a first gate electrode (14a) which is formed on the first gate insulating film (13a); a first side wall (18A) which is formed on a lateral surface of the first gate electrode (14a); and a carbon-containing silicon region (27) which is formed on the outer lateral side of the first side wall (18A).  The level of the upper surface of the carbon-containing silicon region (27) is higher than the level of the upper surface of a region that lies below the first gate insulating film (13a) in the first semiconductor region (10a).