| 摘要 |
A configuration for producing a bulk SiC crystal includes a growing crucible having an electrically conductive crucible wall, an inductive heating device disposed outside the growing crucible for inductively coupling an electric current, which heats the growing crucible, into the crucible wall, and an insulation layer disposed between the crucible wall and the inductive heating device. The insulation layer is formed of a graphite insulation material having short carbon fibers with a fiber length in a range of between 1 mm and 10 mm and a fiber diameter in a range of between 0.1 mm and 1 mm. A method for producing a bulk SiC crystal is also provided.
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