| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which prevents cracks from occurring in manufacturing the nitride semiconductor laser element and forms a nitride semiconductor growth layer excelling in surface flatness to manufacture the nitride semiconductor laser element at a high yield. SOLUTION: In this nitride semiconductor light emitting element and this method of manufacturing the same, a low defect region having a defect density of 10<SP>6</SP>cm<SP>-2</SP>or less and a trench region with a recessed part formed are formed in a surface of a nitride semiconductor substrate, and an etching angleθbetween the side face of the recessed part and its bottom side extension line satisfies a relation of 75°≤θ≤140°in a cross-sectional shape of the recessed part. This prevents cracks from occurring, suppresses creep-up growth from a bottom side growth part of the trench region to restrain the film thickness of a side face growth part, thereby obtaining a nitride semiconductor laser element formed with a nitride semiconductor growth layer having excellent surface flatness at a high yield. COPYRIGHT: (C)2010,JPO&INPIT
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