METHOD FOR PREPARING NANOWIRES OF PHASE CHANGE MATERIALS

摘要

The present invention provides a method for preparing Sb2Te3 single crystalnanowires. The method comprises the steps of: (a) providing a substrate; (b) laminating a Ge-Sb-Te phase change material and doping a crystallization-inducing material on the substrate through sputtering without use of catalyst materials, in order to form a thin film comprising the Ge-Sb-Te phase change material doped with the crystallization inducing material on the substrate; and (c) preferentially bonding the crystallization inducing material with Ge by annealing the substrate on which the thin film is formed inside a reactor, then performing phase separation through the formation of a phase change material Sb2Te3 by bonding an excess of Sb and Te, in order to grow the single crystalnanowires consisting of Sb2Te3 on the thin film.