发明名称 STT-MRAM CELL STRUCTURES
摘要 <p>A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.</p>
申请公布号 WO2010080510(A1) 申请公布日期 2010.07.15
申请号 WO2009US68511 申请日期 2009.12.17
申请人 MICRON TECHNOLOGY, INC.;LIU, JUN;SANDHU, GURTEJ 发明人 LIU, JUN;SANDHU, GURTEJ
分类号 G11C11/15;G11C11/16 主分类号 G11C11/15
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