SEMICONDUCTOR MEMORY CELL AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF OPERATING SEMICONDUCTOR MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory cell capable of scaling a single poly EEPROM cell to the level of a stack gate poly EEPROM cell.

SOLUTION: In the single poly EEPROM cell, a contact for coupling is formed on a floating gate FG, and the contact is connected in the direction of a word line polysilicon WL by a control gate CG line. A dielectric film 102 for coupling is formed between the contact and a polysilicon FG for floating gate, for performing coupling through the polysilicon FG for floating gate and the contact. The semiconductor memory cell enables program, erasure and reading.

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