| 摘要 |
In a method for manufacturing a piezoelectric device, an ion implantation layer is formed at a desired depth from one principal surface of a piezoelectric single crystal substrate by implanting hydrogen ions into the piezoelectric single crystal substrate under desired conditions. The piezoelectric single crystal substrate in which the ion implantation layer has been formed is bonded to a supporting substrate, and THG laser light is irradiated from the supporting substrate side. Since the optical absorptance of the piezoelectric single crystal substrate to the THG laser light is higher than that of the supporting substrate, the irradiated light is absorbed primarily at the bonding surface side of the piezoelectric single crystal with the supporting substrate and heat is locally generated. With the generated heat, a piezoelectric thin film is detached from the piezoelectric single crystal substrate using the ion implantation layer as a detaching interface, and a piezoelectric composite substrate including a piezoelectric thin film and the supporting substrate is formed.
|
