发明名称 DIE STACK OF ULTRA-HIGH BAND MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory formed by use of a three-dimensional die stack. <P>SOLUTION: A system includes: a central processing unit (CPU); a plurality of vertically stacked integrated circuit chips communicating with the CPU; and a plurality of input/output (I/O) ports. Each I/O port includes: a memory device connected to at least one of the plurality of chips by substrate penetration vias; and a direct memory access (DMA) controller communicating with the CPU and the memory device, and managing transmission of data to the memory device or transmission from the memory device. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010157215(A) 申请公布日期 2010.07.15
申请号 JP20090267355 申请日期 2009.11.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 CHEN MING-FA;HSU CHAO-SHUN;CHO CHIKETSU;CHEN CHEN-SHIEN
分类号 G06F13/16;G06F12/00;G11C5/00;H01L25/065;H01L25/07;H01L25/18;H01L27/10 主分类号 G06F13/16
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