METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT, AND SILICON CARBIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor element that can reduce element defects, and the silicon carbide semiconductor element.

SOLUTION: The silicon carbide semiconductor element 100 is provided with a trench 1 configured to have a trench connection portion 5 connected to a trench linear portion 2. The trench linear portion 2 is configured to have a first linear constitution portion 2a and a second linear constitution portion 2b disposed in parallel. The trench connection portion 5 comprises a first connection constitution portion 3 perpendicular to the trench linear portion 2, a second connection constitution portion 4a connecting the first linear constitution portion 2a to the first connection constitution portion 3, and a third connection constitution portion 4b connecting the second linear constitution portion 2b to the first connection constitution portion 3. The angle that the second connection constitution portion 4a and an extension of the first linear constitution portion 2a make is 30°, and the angle that the third connection constitution portion 4b and second linear constitution portion 2b make is 30°.

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