NON-VOLATILE MEMORY WITH OVONIC THRESHOLD SWITCH

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of a current spike flowing across the storage element of a memory cell having an OTS selector during the selection of the memory cell.

SOLUTION: A memory device 100 includes a plurality of memory cells 110 being arranged in a matrix 105 having a plurality of rows and a plurality of columns. Each memory cell 110 includes the storage element P and a selector S for selecting the storage element P. The memory device 100 also includes a plurality of array lines having a plurality of row lines BL each one for selecting the memory cell P of a corresponding row and a plurality of column lines WL each one for selecting the memory cell P of a corresponding column. The memory device further includes for each line among the row lines BL and/or the column lines WL a respective set of local lines LWL each one for selecting a group of memory cells P of the corresponding line, and also a respective set of selection elements each one for selecting the corresponding local line LWL in response to the selection of the respective lines.

COPYRIGHT: (C)2010,JPO&INPIT