METHOD AND APPARATUS FOR EXTENDING EQUIPMENT UPTIME IN ION IMPLANTATION

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus for generating an ion beam by which the service life is prolonged and the stop time of an apparatus is reduced.

SOLUTION: The service life of an ion source (400) can be enhanced or prolonged using a reactant halogen gas (F or Cl) by supply source prepared for etching cleaning in situ of the ion source (400) and an extraction electrode (405) and by characteristics extending service period during cleaning. The characteristics include an accurate vapor flow control, an accurate focusing of ion beam optical element, and a heat control of the extraction electrode for preventing formation of the deposits or destruction of the electrode. The apparatus comprising the ion source for generating dopant ion for semiconductor wafer processing is connected to a remote plasma source. The plasma source supplies F ion or Cl ion to a first ion source so as to clean the deposits in the first ion source and the extraction electrode.

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