发明名称 PHOTOMASK AND METHOD FOR FABRICATING THE SAME
摘要 <p>PURPOSE: A photomask and a method for fabricating the same are provided to improve a patterning performance by changing a mask structure. CONSTITUTION: A mask pattern is formed on a substrate(300). A first high-k material layer is arranged to protect the mask pattern while filling in the space between mask patterns. A light shield layer is formed on the first high-k material layer. The light shield layer and the first high-k material layer are patterned successively to form a first high-k material layer pattern(310a) and a light shield pattern(320a). The second high-k material layer(330) is formed on the outcome of light shield layer and the first high-k material layer.</p>
申请公布号 KR20100081606(A) 申请公布日期 2010.07.15
申请号 KR20090000910 申请日期 2009.01.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOO, HYUN SEUNG;LEE, MYUNG SHIK
分类号 H01L21/027 主分类号 H01L21/027
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