发明名称 |
PHOTOMASK AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A photomask and a method for fabricating the same are provided to improve a patterning performance by changing a mask structure. CONSTITUTION: A mask pattern is formed on a substrate(300). A first high-k material layer is arranged to protect the mask pattern while filling in the space between mask patterns. A light shield layer is formed on the first high-k material layer. The light shield layer and the first high-k material layer are patterned successively to form a first high-k material layer pattern(310a) and a light shield pattern(320a). The second high-k material layer(330) is formed on the outcome of light shield layer and the first high-k material layer.</p> |
申请公布号 |
KR20100081606(A) |
申请公布日期 |
2010.07.15 |
申请号 |
KR20090000910 |
申请日期 |
2009.01.06 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YOO, HYUN SEUNG;LEE, MYUNG SHIK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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