| 摘要 |
<p>PURPOSE: A method for correcting pattern CD of a photomask is provided to effectively correct the CD of a pattern by controlling the resist remaining on light shield layer pattern. CONSTITUTION: A phase inversion layer(110) and a light shield layer are formed on a substrate. A resist pattern(130) is formed on the light shield layer. The light shield layer is etched by using the resist pattern as a mask to form the light shield pattern. The critical dimension of the light shield pattern is measured. A measured value is compared with a target critical dimension to set a line dimension correction area.</p> |
