发明名称 METHOD FOR PREPARING METAL NANOPATTERNS USING ATOMIC FORCE MICROSCOPE LITHOGRAPHY
摘要 <p>PURPOSE: A method for preparing metal nano-patterns using an atomic is provided to effectively form a metal nano pattern on a substrate corresponding to a probe of an atomic microscope by forming a resistor film after forming organic intermediate layer. CONSTITUTION: The surface of a substrate is reformed to a negative ion(S10). An organic compound intermediate layer is formed in the reformed substrate surface(S20). The resist including the organic-metallic compound is spread on the organic compound intermediate layer to form a resist film(S30). A voltage is applied between the probe of an atomic force microscope and the substrate to form a nano-pattern on the surface of the substrate(S40). The resist film is removed from the substrate in which the metal nano pattern is formed(S50).</p>
申请公布号 KR20100081474(A) 申请公布日期 2010.07.15
申请号 KR20090000728 申请日期 2009.01.06
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 LEE, HAI WON;LEE, JO WON;KWON, GWANG MIN;YOO, JAE BEOM
分类号 H01L21/027 主分类号 H01L21/027
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