<p>Disclosed is a plasma processing apparatus which comprises: a processing chamber which has a reaction chamber (a) and is configured of a chamber (2), an electrode flange (4) and an insulating flange (81); a support part (15) which is arranged within the reaction chamber (a) and on which a substrate (10) is placed; a shower plate (5) which is arranged within the reaction chamber (a) so as to face the substrate (10) and supplies a process gas to the substrate (10); a plurality of gas supply parts (8) which are concentrically and annularly arranged within a space (31) between the electrode flange (4) and the shower plate (5), respectively communicate with a plurality of gas inlet openings (34), and independently supply process gases having different compositions to the shower plate (5); and a voltage-applying part (33) which applies a voltage between the shower plate (5) and the support part (15).</p>
