发明名称 THIN FILM TRANSISTOR SUBSTRATE PRECURSOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To correct a defect of a thin film transistor by suppressing degradation in the display quality of a liquid crystal display. SOLUTION: A thin film transistor substrate precursor is provided with: a plurality of gate lines 11a in which a gate electrode is defined for each pixel and which extend parallel to one another; a first semiconductor layer 13a provided in the form of an island so as to be superposed on the gate electrode of each pixel via an insulation film; a second semiconductor layer 13b provided in the form of an island so as to be superposed on each gate line 11a for each pixel via the insulation film; a plurality of source lines 14a in which a source electrode 14aa is defined so as to be superposed on one end of the gate electrode for each pixel via the first semiconductor layer 13a and which extend parallel to one another in a direction intersecting each gate line 11a; and a plurality of drain lines 14b each of which is connected to each pixel electrode and in each of which a drain electrode 14ba is defined so as to be superposed on the other end of the gate electrode for each pixel via the first semiconductor layer 13a, and so as to be opposite the source electrode 14aa. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010156867(A) 申请公布日期 2010.07.15
申请号 JP20080335497 申请日期 2008.12.27
申请人 SHARP CORP 发明人 TANAKA NAOYUKI
分类号 G02F1/1368;G09F9/00;G09F9/30;H01L21/285;H01L21/3205;H01L21/336;H01L23/52;H01L29/417;H01L29/423;H01L29/49;H01L29/786 主分类号 G02F1/1368
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