THROUGH-SILICON VIA WITH SCALLOPED SIDEWALLS

摘要

PURPOSE: A through-silicon via with scalloped sidewalls is provided to generate trough-silicon via having a scalloped sidewall by transforming a bosch process which forms a vertical sidewall. CONSTITUTION: More than one dielectric layer(412) is formed on a substrate(102). A penetration silicon via(410) is extended by penetrating the substrate. The penetration silicon via comprises a sidewall with a scalloped surface. The scallops along the sidewall have a depth over 0.01 um. The penetration silicon via directly touches an electronic circuit formed on the substrate.