| 摘要 |
PURPOSE: A method for manufacturing capacitor of a semiconductor device is provided to suppress a die shot in an exposure process of forming a bottom electrode by forming a support layer in not only a cell region but also an outer wall of the cell region. CONSTITUTION: A first insulating layer is formed on a semiconductor substrate(300) including a cell region(3000a) and an edge area(3000b). A support layer(320) is formed on the insulating layer and the cell edge area. A second insulating layer is formed on the support layer. A hard mask layer is formed on the whole surface including the support layer. The hard mask layer, the support layer, and the first insulating layer are etched to form a bottom electrode(360).
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