CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF

摘要

A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises: an underlayer film formed at least on a bottom portion of the contact hole: and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole.