发明名称 Manufacturing method of a semiconductor device
摘要 <p>A manufacturing method of a semiconductor device of this invention includes providing a semiconductor wafer (101) having a metal pad (102) on a front surface thereof, bonding the wafer (101) and a holding substrate (111) which bolsters the wafer (101) through a film (110), forming an opening (114) by etching the wafer (101) followed by forming an insulating film (115) on a side wall of the opening (114), forming a metal (117) in the opening (114) and separating the wafer (101) and the holding substrate (111).</p>
申请公布号 EP2207198(A2) 申请公布日期 2010.07.14
申请号 EP20100003219 申请日期 2003.06.18
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOMA TAKASHI;SHINOGI HIROYUKI;TAKAO YUKIHIRO
分类号 H01L21/683;H01L23/12;H01L21/60;H01L21/68;H01L21/768;H01L21/98;H01L23/00;H01L23/31;H01L23/48;H01L23/485;H01L25/065 主分类号 H01L21/683
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