发明名称 |
Manufacturing method of a semiconductor device |
摘要 |
<p>A manufacturing method of a semiconductor device of this invention includes providing a semiconductor wafer (101) having a metal pad (102) on a front surface thereof, bonding the wafer (101) and a holding substrate (111) which bolsters the wafer (101) through a film (110), forming an opening (114) by etching the wafer (101) followed by forming an insulating film (115) on a side wall of the opening (114), forming a metal (117) in the opening (114) and separating the wafer (101) and the holding substrate (111).</p> |
申请公布号 |
EP2207198(A2) |
申请公布日期 |
2010.07.14 |
申请号 |
EP20100003219 |
申请日期 |
2003.06.18 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NOMA TAKASHI;SHINOGI HIROYUKI;TAKAO YUKIHIRO |
分类号 |
H01L21/683;H01L23/12;H01L21/60;H01L21/68;H01L21/768;H01L21/98;H01L23/00;H01L23/31;H01L23/48;H01L23/485;H01L25/065 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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