| 摘要 |
<p>PURPOSE: A reduction method of threshold voltage distribution is provided to remove a part of electron which is implanted in a trap inside/outside a nitrate liner through UV radiation to reduce the distribution of the threshold voltage. CONSTITUTION: An electronics is implanted inside or outside a trap of a nitride liner. The implantation of the electronics is performed by using a hot electron. A part of the electronics, implanted inside or outside the trap of the nitride liner, is removed to reduce the distribution of a threshold voltage of a transistor. Transistors are arranged in a core region or a peri region of the semiconductor memory device.</p> |
