| 摘要 |
<p>A semiconductor device is provided having an increased hardness against contact of a probe needle. The semiconductor device includes: a semiconductor substrate; a semiconductor element formed in the semiconductor substrate; an insulating film formed above the semiconductor substrate and covering the semiconductor element; a multilayer wiring structure formed in the insulating film; and a pad electrode structure connected to the multilayer wiring structure and formed on the insulating film, the pad electrode structure including a conductive adhesion film, a conductive pad electrode formed above the conductive adhesion film, and a conductive hydrogen barrier film formed above the conductive pad electrode.</p> |
