3-DIMENSIONAL SEMICONDUCTOR DEVICE

摘要

PURPOSE: A 3-dimensional semiconductor device is provide to reduce a leakage current of a selection transistor in programming by increasing the threshold voltage of the selection transistor. CONSTITUTION: A vertical channel pattern(165) is formed on a substrate(110). A plurality of cells gate patterns(143,145,147,149) and selection a gate pattern(132) are laminated on the substrate along the sidewall of the vertical channel pattern. A charge storage pattern is formed between the vertical channel pattern and cell gate pattern. Selection gate insulating layers(152,156) are formed between the vertical channel pattern and selection gate pattern.