发明名称 Level shift circuit without high voltage stress of transistors and operating at low voltages
摘要 A level shift circuit includes a high voltage circuit, a clamp circuit, an input circuit, and a bypass circuit. The high voltage circuit is electrically connected to a high voltage terminal. The clamp circuit can prevent the transistors of the high voltage circuit from high voltage stress when a voltage level of the high voltage terminal is greater than a voltage level of a voltage source. The bypass circuit is used to bypass the clamp circuit when a voltage level of the high voltage terminal is smaller than a voltage level of transistor breakdown voltages.
申请公布号 US7755392(B1) 申请公布日期 2010.07.13
申请号 US20090469693 申请日期 2009.05.21
申请人 EMEMORY TECHNOLOGY INC. 发明人 KU WEI-MING
分类号 H03K19/0175;H03K19/094 主分类号 H03K19/0175
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