| 摘要 |
A phase-change memory device has a different-material contact plug having a first electrically conductive material plug made of a first electrically conductive material, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being buried in a common contact hole. The different-material contact plug is effective for reducing the radiation of heat from a contact plug beneath a phase-change layer. The phase-change memory device also includes an extension electrode layer held in contact with a portion of the bottom surface of the phase-change layer in an area displaced off a position directly above a contact surface through which the phase-change layer and the heater electrode contact each other. The extension electrode layer reduces the radiation of heat from an electrode above the phase-change layer.
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