| 摘要 |
The capabilities of the Modulated Optical Reflectance (MOR) technology in dopant metrology applications are combined with the sensitivity of the PhotoReflectance (PR) method in the present system to provide stress and other measurements in semiconductor samples. Such combination enhances the measurement performance of MOR based systems in ion implant applications (implantation dose and energy) and expands system capabilities into a new area of structural parameters measurements, for example, strain in silicon wafers.
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