发明名称 |
PROCESSES FOR PURIFICATION OF SILICON TETRAFLUORIDE |
摘要 |
<p>Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.</p> |
申请公布号 |
KR20100080902(A) |
申请公布日期 |
2010.07.13 |
申请号 |
KR20107007571 |
申请日期 |
2008.09.11 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
REVANKAR VITHAL;IBRAHIM JAMEEL |
分类号 |
C01B33/107;B01J23/70;B01J23/889;B01J37/02 |
主分类号 |
C01B33/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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