发明名称 Electron multiplication CMOS imager
摘要 A pixel for an imager is disclosed that includes at least one electron multiplication (EM) gain stage configured in a loop and electrically coupled to a charge collection region and a charge readout region, the charge collection region being configured to generate a charge packet, the EM gain stage being configured to amplify the charge packet by impact ionization and to circulate the charge packet a predetermined number of times in one direction around the loop, the charge readout region being configured to receive the amplified charge packet and convert the amplified charge to a measurable signal. The at least one EM gain stage, the charge collection region, and the charge readout region can be formed monolithically in an integrated circuit. The pixel can be manufactured using a CMOS process. The pixel can further include a second EM gain stage formed in the integrated circuit to increase the amount of amplification around the loop.
申请公布号 US7755685(B2) 申请公布日期 2010.07.13
申请号 US20070863945 申请日期 2007.09.28
申请人 SARNOFF CORPORATION 发明人 TOWER JOHN ROBERTSON;ANDREWS JAMES TYNAN
分类号 H01L31/107;H01L31/08 主分类号 H01L31/107
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