METHODS OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A methods of fabricating a semiconductor device is provided to reduce the load of counter doping by performing a local doping through a conformal doping. CONSTITUTION: A semiconductor substrate including a cell region(A) and a core / a peri area(B) is prepared. A gate insulating layer(121) is formed on semiconductor substrate. The first undoped polysilicon layer(122) is formed on the gate insulating layer. The first doped polysilicon layer(123) is formed on the first undoped polysilicon film. The first doped polysilicon film is removed so that the first undoped polysilicon film is exposed to the outside. The dopant of the first conductivity type is inserted in a part and cell region of the core / peri area.