| 摘要 |
<p>PURPOSE: A method of manufacturing a semiconductor device is provided to stably improve the property of transistor by preventing an oxide layer and a nitride pattern from staying behind in forming a buried gate. CONSTITUTION: An element isolation film(102) defining an active area is formed on a semiconductor substrate(100) including a cell region(C) and an peripheral region. A nitride pattern(104) for a hard mask, exposing a gate reserved area at the cell region, is formed in the semiconductor substrate. The exposed cell area is etched by using the nitride pattern to form a trench for the gate. An oxide film(112) is selectively formed on the nitride pattern. A buried gate is formed in order to be recessed into the trench for the gate.</p> |
