Semi conductor liquid material's active layer depositing method for manufacturing copper-indium-gallium-selenium type solar cell, involves depositing active layer on support layer made of indium and gallium having undergone friction step

摘要

The method involves depositing an active layer on a support layer made of indium (5) and gallium (3) having undergone a friction step before the deposition of the active layer, where the active layer is presented in a form of nano particles. The friction step is carried out using a cloth i.e. velvet cloth. The support layer is formed by depositing liquid mixture made of indium and gallium on a substrate (1) e.g. strip steel, where thickness of the support layer is lower or equal to 100 nanometers. The substrate is covered with a molybdenum layer (2) before the deposition of the support layer. The active layer comprises material selected from a group consisting of metal sulfides, metal selenides, sulfur and selenium.