| 摘要 |
<p>PURPOSE: In predicting the gate tunneling leakage current of MOSFET, the temperature characteristic prediction method of the gate tunneling leakage current supports the model in which the tendency according to temperature is reflected. The more correct simulation is made possible. CONSTITUTION: In the mathematical model of the gate tunneling leakage current, the value uniting the thermal gap narrowing parameter showing the scaling value of the extent in which the barrier height changes according to temperature for the first parameter showing the barrier height second parameter and the 3rd parameter showing the temperature change is corresponded to(S10). The temperature characteristic of gate tunneling leakage current having the non-linearity about temperature the first parameter in which the combination value of said 3rd parameter and the second parameter is corresponded to is used in the mathematical model is anticipated(S20).</p> |
