VERTICAL METAL-INSULATOR-METAL (MIM) CAPACITOR USING GATE STACK, GATE SPACER AND CONTACT VIA

摘要

PURPOSE: A semiconductor structure and a method for manufacturing the same are provided to be simultaneously manufactured with a metal-oxide semiconductor electric-field-effect transistor and obtain a vertical type metal-insulator-metal capacitor. CONSTITUTION: A dielectric insulating region(12) is formed on a semiconductor substrate(10). A gate dielectric(14) is formed on the dielectric insulating region. A gate(16) is formed on the gate dielectric. A spacer with a constant thickness is formed on the sidewall of the gate. A contact via is formed on the sidewall of the spacer with a constant thickness.