| 摘要 |
PURPOSE: An image sensor and a method for fabricating the same are provided to improve optical efficiency by re-radiating reflected light from a reflection pattern to a photo diode. CONSTITUTION: A silicon pattern(110) is formed on a flexible substrate(100). An element isolation pattern(120) is formed through the silicon pattern. A circuit layer(130) is formed on the silicon pattern. The circuit layer includes a first isolation pattern(121) which is directly connected with the element isolation pattern. A wiring layer(135) is formed on the circuit layer. The wiring layer includes a second isolation pattern which corresponds to the first isolation pattern.
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