| 摘要 |
PURPOSE: A MIM capacitor and a method of manufacturing the same are provided to manufacture a high capacity capacitor by forming an additional dielectric film inside a contact hole connected to the MIM capacitor. CONSTITUTION: A top metal film(206) is formed in an MIM capacitor defined region. Diffusion barriers(210a,210b) are formed on inner side of the contact hole in which the inter-layer insulating film(208) is patterned to expose the top metal film to the outside. A dielectric layer(204) is additionally formed on the inner side of the contact hole through an oxidation process of the diffusion barrier. Contact plugs(214a,214b) are buried inside the contact hole in which the diffusion barrier and addition dielectric layer are formed.
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