| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device eliminates the passivation layer without the damage of the diffusion barrier existing in the lower part of the metallic fuse by using the protective film. It measures the stable polymide and the process is proceed without the loss of the metallic fuse. CONSTITUTION: It defined as the pad area(202) and fuse regions(200) having diffusion barriers and the metallic fuse(60) which the semiconductor device is successively laminated. The semiconductor device is to protect with the passivation layer while the fuse regions is opened. The passivation layer is removed. After the passivation layer is eliminated, the protective film(100A) covers the diffusion barrier and metallic fuse of the fuse regions. Residues eliminating the passivation layer are removed.
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