| 摘要 |
PURPOSE: A MIM capacitor and this formation method of the semiconductor device relatively make low the level difference by pattern and etching of the bottom metal layer. In the MIN structure, the damage of insulator can be prevented. CONSTITUTION: A bottom metal layer(302) is formed in the top of the substrate in which the down metal wiring is formed. After the photoresist pattern is formed on the bottom metal layer, the etching about the domain in which the MIM(Metal-Insulator-Metal) structure is formed operates. The insulator(304) and overlying metal layer(306) are formed in the bottom metal layer front side. After photoresist is evaporated on the overlying metal layer, the exposure about domain except for the domain in which the MIN structure is formed and etching operates.
|
