发明名称 |
FLASH MEMORY APPARATUS AND READ OPERATION CONTROL METHOD THEREFOR |
摘要 |
PURPOSE: A flash memory apparatus and a read operation control method therefore are provided to improve operation speed by replacing a block where reading repeatedly occurs with a spare block. CONSTITUTION: A flash memory(10) comprises a plurality of blocks. A read operation control circuit(20) determines the replacement of a block according to the number of reading each block. The read operation control circuit comprises a map administration unit, a counter, and a comparison unit. The map administration unit generates and updates a counter map. The counter map stores the number of reading operation. The counter counts the number of reading the block. The comparison unit compares a read times with the number of maximum repetitions.
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申请公布号 |
KR20100078198(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20080136385 |
申请日期 |
2008.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, MYUNG SUK;KWAK, JEONG SOON;KIM, DO HEE |
分类号 |
G11C16/26;G11C16/28 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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