发明名称 FLASH MEMORY APPARATUS AND READ OPERATION CONTROL METHOD THEREFOR
摘要 PURPOSE: A flash memory apparatus and a read operation control method therefore are provided to improve operation speed by replacing a block where reading repeatedly occurs with a spare block. CONSTITUTION: A flash memory(10) comprises a plurality of blocks. A read operation control circuit(20) determines the replacement of a block according to the number of reading each block. The read operation control circuit comprises a map administration unit, a counter, and a comparison unit. The map administration unit generates and updates a counter map. The counter map stores the number of reading operation. The counter counts the number of reading the block. The comparison unit compares a read times with the number of maximum repetitions.
申请公布号 KR20100078198(A) 申请公布日期 2010.07.08
申请号 KR20080136385 申请日期 2008.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, MYUNG SUK;KWAK, JEONG SOON;KIM, DO HEE
分类号 G11C16/26;G11C16/28 主分类号 G11C16/26
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