| 摘要 |
PURPOSE: A chemical mechanical polishing slurry composition is provided to obtain high polishing rate of the copper wiring according to a polishing pressure and to be used for a polishing process of the copper wiring due to a high polishing speed of a barrier film. CONSTITUTION: A chemical mechanical polishing slurry composition for polishing a copper wiring comprises ultrapure water, an abrasive, an oxidizing agent, a corrosion inhibitor, an organic acid, and an additive. An acrylic aicd-acrylamide copolymer is used as the additive with an amount of 0.001-0.04 weight% based on the total slurry composition. The acrylic acid-acrylamide copolymer has a copolymerization ratio of 1:30 - 10:1, respectively and an average molecular weight of 100,000 - 400,000.
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