| 摘要 |
PURPOSE: A wafer supporting device and a manufacturing method thereof are provided to improve the hardness and the heat resistance of a dimple by forming a dimple including zirconium nitride on an electrostatic chuck. CONSTITUTION: A wafer supporting part comprises a susceptor. The susceptor has an electrostatic chuck, a first and second electrode, and a plurality of dimples(140). The electrostatic chuck is made of one among aluminum nitride, boron nitride, and titanium oxide. The first and the second electrode are formed inside the electrostatic chuck. A plurality of dimples are formed on the electrostatic chuck. The dimple comprises zirconium nitride. The thickness of a dimple is 4.5um or 10um. The diameter of a dimple is 1.8mm or 2.2mm.
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