| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element with a "p" electrode having as good ohmic properties and transmissivity as possible. <P>SOLUTION: The semiconductor light emitting element includes a substrate 2, an n-type semiconductor layer 4 provided on the substrate, an active layer 6 provided on a first region of the n-type semiconductor layer and emitting light, a p-type semiconductor layer 8 provided on the active layer, the "p" electrode 10 provided on the p-type semiconductor layer and having a first conductive oxide layer 10a of <40 atom.% in oxygen content, and an "n" electrode 14 provided on a second region of the n-type semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
